● The PPA material developed by BASF combines excellent thermal stability, low water absorption, excellent insulation and high CTI
● Enables efficient and reliable power management of electrical components, ideal for use in electric vehicles, renewable energy production and smart manufacturing
● BASF will participate in CHINAPLAS 2023: Booth 17F71, Hall 17, Shenzhen International Convention and Exhibition Center, China
Offering smart technology and lightweight plastic components for power electronics, BASF is now introducing a polyphthalamide (PPA) that is particularly suitable for housings for insulated-gate bipolar transistors (IGBTs). Laser Markable Ultramid®
Advanced N3U41 G6 LS is a halogen-free flame retardant compound that combines excellent thermal stability, low water absorption and excellent electrical properties. It is characterized by a relative tracking index (CTI) exceeding
600V, Ultramid® Advanced N3U41 G6 LS compared to materials used for IGBTs to date
The creepage distance is lower and the insulation performance is better, which contributes to the lightweight and miniaturization of the IGBT.
Due to its excellent chemical resistance and dimensional stability, Ultramid® Advanced N
Products can improve the strength, long-term performance and reliability of IGBTs in the fields of electric vehicles, high-speed railways, solar and wind energy, and smart manufacturing, and meet customers’ increasing needs for energy saving, weight reduction and portability.
Insulated-gate bipolar transistors play the role of fast and efficient switching in high-power circuits. IGBT
Can be assembled into modules for higher voltage, higher current and more compact electrical applications. Under severe conditions, materials must have excellent electrical insulation, flame retardancy, dimensional stability and long-term resistance to heat and moisture: Ultramid®
Advanced N
Optimized to withstand higher temperatures and higher currents while maintaining its mechanical strength, it is strong enough to meet these challenges. It protects semiconductors from mechanical as well as environmental influences such as moisture, dust and dirt.
UL listed, Ultramid® Advanced N has excellent electrical
RTI (Relative Thermal Index) values up to 150°C. In addition, it does not contain corrosive components such as halogens, thus avoiding the risk of contact corrosion. In terms of IGBT production process, BASF PPA can be injection molded together with metal components and has good compatibility with semiconductor packaging materials.
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