The market for fourth-generation semiconductor materials has attracted increasing attention and global research continues to deepen.

The fourth generation of semiconductor materials refers to ultra-narrow bandgap (UNBG) semiconductor materials represented by diamond (C), gallium oxide (Ga2O3), aluminum nitride (AlN) and antimonide (GaSb, InSb). The fourth generation semiconductor material is a new generation of semiconductor material. Compared with other semiconductor materials, the fourth generation semiconductor material has the characteristics of small size, low energy consumption, strong function and high mobility. It can be used in detectors, optoelectronics, lasers and other devices. middle.

At present, semiconductor materials have gone through four generations, including the first generation of elemental semiconductor materials (represented by silicon and germanium), the second generation of compound semiconductor materials (represented by gallium arsenide and indium phosphide), and the third generation of wide bandgap semiconductors. Materials (represented by silicon carbide, gallium nitride, zinc oxide) and fourth-generation ultra-narrow bandgap semiconductor materials. At present, there is high enthusiasm for research on third-generation semiconductor materials, but with the iteration of technology, fourth-generation semiconductor materials are also attracting market attention.

According to the “2023-2027 China’s Fourth-Generation Semiconductor Materials Industry Market Monitoring and Future Development Prospects Research Report released by the Industrial Research Center 》 shows that as a strategic high ground for science and technology, companies from all over the world are currently actively deploying the fourth-generation semiconductor material market. In China, companies and institutions engaged in the research and production of fourth-generation semiconductor materials include Shanghai Institute of Optics and Mechanics and Shanghai Microsystems Institute, Nanjing University, Shandong University, Xinhu Zhongbao, Lanxiao Technology, Nanda Optoelectronics, Sinosteel International, etc.

Gallium oxide is one of the representative fourth-generation semiconductor materials. Power devices prepared with gallium oxide materials have better heat resistance, reliability, sensitivity, etc., and have a wider range of applications. Gallium oxide preparation processes include hydration method, neutralization method, three-stage electrolysis method, microwave hydrothermal method, etc. Because gallium oxide has a high melting point and is not easy to decompose, it is difficult to prepare large-size products. Globally, Japan’s Flosfia and Japan’s NCT are at the leading level in the research of gallium oxide materials and power devices. In contrast, my country’s gallium oxide research and production lags behind.

Gallium antimonide (GaSb) is a type of antimonide semiconductor. As one of the fourth-generation semiconductor materials, gallium antimonide has the characteristics of high electron mobility and low power consumption. It is used in fields such as optical communications, infrared detectors, and solar cells. The application prospects are broad. Globally, the United States is at the leading level in the research and application of gallium antimonide, and related companies include American Elements, American ALB Materials, etc.

Industry analysts said that in recent years, thanks to technological iterations, the market for fourth-generation semiconductor materials has attracted increasing attention, and its global layout The number of enterprises continues to increase. In the international market, as research continues to deepen, research on fourth-generation semiconductor materials has achieved certain results. However, overall, the current fourth-generation semiconductor materials are still in the early stages of industrialization and are still far away from large-scale production and application.